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Chiral semiconductors have been recently suggested as the basic building blocks for the design of chiral optoelectronic and electronic devices for chiral emission and spintronics. Herein, we report that through the formation of a chiral/achiral heterostructure, one can develop a chiral system that integrates the merits of both chiral and achiral components for developing a demanded chiral emitter. In the R-(+)-(or S-(−)-)1-(1-naphthyl)-ethylammonium lead bromide/CsPbBr3 heterostructure, we show that the photoluminescence of CsPbBr3 carries a degree of circular polarization of around 1% at room temperature. It is explained that such chiral emission is enabled through the chiral self-trapped exitonic absorption of R-(+)- (or S-(−)-)1-(1-naphthyl)-ethylammonium lead bromide. This work may provide an alternative way to generate bright circularly polarized light from achiral materials, which has potential applications in spintronics, biosensing, and signal encryption. 

Excited by the great success of metal halide perovskites in the optoelectronic and electro-optic fields and the interesting emerging physics (Rashba splitting, quantum anomalous hall effect) of layered metal halides, metal halides have recently been attracting significant attentions from both research and industrial communities. It is shown that most progresses have been made when these materials are obtained at reduced dimensions. Among several growth methods, vapor phase epitaxy has been demonstrated with a universal control on morphology, phase, and composition. We thus believe that a thorough understanding on the physical properties and on the growth of general metal halide compounds at reduced dimensions would be very beneficial in the study of recent perovskites and layered metal halide materials. This review covers the physical properties of most studied metal halides and summarizes the vapor phase epitaxial growth knowledge collected in the past century. We hope that this comprehensive review could be helpful in designing new physical properties and in planning growth parameters for emerging metal halide crystals. 

Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral. Spectroscopic and structural analysis, and first-principles calculations, determine the material to be a previously unknown low-dimensional hybrid perovskite (R)-(−)-1-cyclohexylethylammonium/(S)-(+)-1 cyclohexylethylammonium) PbI 3 . Optical and electrical measurements characterize its semiconducting, ferroelectric, switchable pyroelectricity and switchable photoferroelectric properties. Temperature dependent structural, dielectric and transport measurements reveal a ferroelectric-paraelectric phase transition. Circular dichroism spectroscopy confirms its chirality. The development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field and chiral enantiomer–dependent Rashba-Dresselhaus splitting and circular photogalvanic effects.